1.2kV SiC Power MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability

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Stephan Wirths, R&D Senior Engineer, Hitachi ABB Power Grids:
Despite the recent progress in SiC power MOSFET technology and its commercialization, the defective MOS interface still hampers the exploitation of the full potential of these devices. We have developed a high-k gate stack technology on SiC that shows significantly reduced density of interface states (Dit) and consequently substantially improved on-state performance for 1.2kV SiC MOSFETs. Additionally, we have demonstrated superior threshold voltage (VTH) stability, i.e. virtually no VTH-shift during static characterization as function of the starting gate voltage and its ramp. These developments have been recently awarded with the IEEE ISPSD 2020 poster award.
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